Semiconductor Integrated Device & Process Lab.

Journals

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Journals

368

Field-induced nucleation switching in binary ovonic threshold switches / Sangmin Lee,  Jongmyung Yoo, Jaehyuk Park, and  Hyunsang Hwang / Applied Physics Letters 115(23), 233503 (201912)

367

Structural engineering of Li based electronic synapse for high reliability / Yunseok Choi, Chuljun Lee, Myungjun Kim, Yubin Song, Hyunsang Hwang, Daeseok Lee / IEEE Electron Device Letters 40(12), pp. 1992 - 1995 (201912)

366

Ferroelectric materials for neuromorphic computing / S. Oh, H. Hwang, and I. K. Yoo / APL Materials 7(9),091109 (201909) 

365

Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions / Writam Banerjee, Hyunsang Hwang / Advanced Electronic Materials 1900744 (201909) 

364

One transistor-two resistive RAM device for realizing bidirectional and analog neuromorphic synapse devices / Seokjae Lim, Myounghoon Kwak, and Hyunsang Hwang / Nanotechnology 30 (2019) 455201 (201908) 

363

Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes / Jaesung Park, Chuljun Lee, Myonghoon Kwak, Solomon Amsalu Chekol, Seokjae Lim, Myungjun Kim, Jiyong Woo, Hyunsang Hwang, Daeseok Lee / Nanotechnology  30(30),305202 (6pp) (201907) 

362

Improved Endurance of HfO2-based Metal-Ferroelectric-Insulator-Silicon structure by High-Pressure Hydrogen Annealing / Seungyeol Oh, Jeonghwan Song, In Kyeong Yoo, Hyunsang Hwang / IEEE Electron Device Letters 40(7),8706981, pp. 1092-1095 (201907) 

361

Stuck-at-Fault Tolerant Schemes for Memristor Crossbar Array-Based Neural Networks / Injune Yeo , Myonglae Chu , Sang-Gyun Gi , Hyunsang Hwang , and Byung-Geun Lee / IEEE Transactions on Electron Devices 66(7),8715385, pp. 2937-2945 (201907) 

360

3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications / Jongmyung Yoo, Seong Hun Kim, Solomon Amsalu Chekol, Jaehyuk Park, Changhyuck Sung, Jeonghwan Song, Donghwa Lee, Hyunsang Hwang / Advanced Electronic Materials 1900196 (201905)

359

Understanding of Proton Induced Synaptic Behaviors in Three–terminal Synapse Device for Neuromorphic Systems / Jongwon Lee, Seokjae Lim, Myonghoon Kwak, Jeonghwan Song and Hyunsang Hwang / Nanotechnology 30 (25) 255202 (6pp) (201904) 

358

Investigation of I−V Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications / Changhyuck Sung, Andrea Padovani, Bastien Beltrando, Donguk Lee, Myunghoon Kwak, Seokjae Lim, Luca Larcher, Vincenzo Della Marca, Hyunsang Hwang / IEEE Journal of the Electron Devices Society  7, 8658233, pp. 404-408 (2019) 

357

An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application / Solomon Amsalu Chekol, Jeonghwan Song, Jongmyung Yoo, Seokjae Lim, and Hyunsang Hwang / Applied Physics Letters 114(10),102106 (201903) 

356

Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory / Sangmin Lee, Jeonghwan Song, Seokjae Lim, Solomon Amsalu Chekol, Hyunsang Hwang / Solid-State Electronics  153, pp. 8-11 (201903)

355

Hardware implementation of neural network using pre-programmed resistive device for pattern recognition / Wooseok Choi, Kibong Moon, Myonghoon Kwak, Changhyuck Sung, Jongwon Lee,Jeonghwan Song, Jaesung Park, Solomon Amsalu Chekol, Hyunsang Hwang / Solid-State Electronics  153, pp. 79-83 (201903) 

354

Various Threshold Switching device for Integrate and Fire Neuron Applications / Donguk Lee, Myonghoon Kwak, Kibong Moon, Wooseok Choi, Jaehyuk Park, Jongmyung Yoo, Jeonghwan Song, Seokjae Lim, Changhyuck Sung,  Writam Banerjee, Hyunsang Hwang / Advanced Electronic Materials 1800866, pp.1-7 (201902) 

353

Synaptic and neuromorphic functions: general discussion / Alexandra I. Berg, Stefano Brivio, Simon Brown, Geoffrey Burr, Sweety Deswal, Jonas Deuermeier, Ella Gale, Hyunsang Hwang, Daniele Ielmini, Giacomo Indiveri, Anthony J. Kenyon, Asal Kiazadeh, Itir Koymen, Michael Kozicki, Yang Li,Daniel Mannion, Themis Prodromakis, Carlo Ricciardi, Sebastian Siegel, Maximilian Speckbacher, Ilia Valov, Wei Wang, R. Stanley Williams, Dirk Wouters and Yuchao Yang / Faraday discussions  213, 553-578 (201902)

352

RRAM-based synapse devices for neuromorphic systems / K. Moon, S. Lim, J. Park, C. Sung, S. Oh, J. Woo, J. Lee and H. Hwang / Faraday discussions 213, pp. 421-451 (201902) 

351

W/WO3-x based three-terminal synapse device with linear conductance change and high on/off ratio for neuromorphic application / Jinwon Go, Yonghun Kim, Myonghoon Kwak, Jeonghwan Song, Solomon Amsalu Chekol, Jung-Dae Kwon and Hyunsang Hwang / Applied Physics Express 12(2),026503 (201902)

350

NbO2-based frequency storable coupled oscillators for associative memory application / Donguk Lee, Euijun Cha, Jaehyuk Park, Changhyuck Sung, Kibong Moon, Solomon Amasalu Chekol, and Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1), pp. 250-253  (201812)

349

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr0.7Ca0.3MnO3 Material Improvements and Device Measurements / Kibong Moon, Alessandro Fumarola, Severin Sidler, Junwoo Jang, Pritish Narayanan, Robert M Shelby, Geoffrey W Burr, Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1),8168326, pp. 146-155 (201812)