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20
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Synergy effect of microwave annealing and high-pressure hydrogen annealing on Poly-Si thin-film transistor / Sunhyeong Lee, Jongwon Lee, Junyoung Lee, Jaeduk Lee, Hyunsang Hwang / Nanotechnology 33(43),435203 (202210)
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19
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Improvement of endurance and switching speed in Hf1- x Zr xO2thin films using a nanolaminate structure / Sunhyeong Lee, Jongwon Lee, Junyoung Lee, Jaeduk Lee, Hyunsang Hwang / Nanotechnology 33(39),395205 (202209)
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18
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Exploiting Read Current Noise of TiOxResistive Memory by Controlling Forming Conditions for Probabilistic Neural Network Hardware / Wooseok Choi; Wonjae Ji; Seongjae Heo; Donguk Lee; Kyungmi Noh; Chuljun Lee; Jiyong Woo; Seyoung Kim; Hyunsang Hwang / IEEE Electron Device Letters 43(9), pp. 1571-1574 (202209)
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17
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Integrate-and-Fire Neuron With Li-Based Electrochemical Random Access Memory Using Native Linear Current Integration Characteristics / Donguk Lee, Jongwon Lee, Chuljun Lee, Seyoung Kim, Hyunsang Hwang / IEEE Transactions on Electron Devices 69(9), pp. 4889-4893 (202209)
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16
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On-Chip Integrated Atomically Thin 2D Material Heater as a Training Accelerator for an Electrochemical Random-Access Memory Synapse for Neuromorphic Computing Application / Revannath Dnyandeo Nikam*, Jongwon Lee, Wooseok Choi, Dongmin Kim, Hyunsang Hwang* / ACS Nano 16(8), pp. 12214-12225 (202208)
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15
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Study of high-pressure hydrogen annealing effects on InGaZnO thin-film transistors / Kyumin Lee, Laeyong Jung, Hyunsang Hwang / Applied Physics Letters 121(7), 072104 (202208)
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14
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Effect of Stochastic Resonance on Classification Accuracy of Neural Networks Utilizing Inherent Stochasticity in Threshold Voltage of Ovonic Threshold Switching Device / Wooseok Choi, Myonghoon Kwak, Donguk Lee, Sangmin Lee, Chuljun Lee, Seyoung Kim, Hyunsang Hwang / IEEE Journal of the Electron Devices Society 10, pp. 666-669 (202208)
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13
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Atomic Threshold Switch Based on All-2D Material Heterostructures with Excellent Control Over Filament Growth and Volatility / Revannath Dnyandeo Nikam and Hyunsang Hwang / Advanced Functional Materials 32(29) 2201749 (202207)
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12
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Nonvolatile Frequency-Programmable Oscillator with NbO2 and Li-based Electro-Chemical Random Access Memory for Coupled Oscillators-Based Temporal Pattern Recognition System / Donguk Lee, Jongwon Lee, Sangmin Lee,. Chuljun Lee, Sungjae Heo, Hyunsang Hwang / IEEE Electron Device Letters 43(7), pp. 1041-1044 (202207)
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11
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Linear Frequency Modulation of NbO2-Based Nanoscale Oscillator With Li-Based Electrochemical Random Access Memory for Compact Coupled Oscillatory Neural Network / Donguk Lee, Myonghoon Kwak, Jongwon Lee, Jiyong Woo and Hyunsang Hwang / Frontiers in Neuroscience 2022(16), 939687 (202206)
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10
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Effect of the Oxygen Composition Control of HfOx Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications / Seungwoo Lee, Seong Hun Kim,Seungyeol Oh,Donghwa Lee,Hyunsang Hwang / Advanced Electronic Materials 8(5), 2101257 (202205)
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9
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A grease for domain walls motion in HfO2-based ferroelectrics / Alireza Kashir, Mehrdad Ghiasabadi Farahani, Ján Lančok, Hyunsang Hwang, Stanislav Kamba / Nanotechnology 33(15),155703 (202204)
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8
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Improved Synaptic Characteristics of Oxide-Based Electrochemical Random Access Memory at Elevated Temperatures Using Integrated Micro-Heater / Jongwon Le,; Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunsang Hwang / IEEE Transactions on Electron Devices 69(4), pp. 2218-2221 (202204)
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7
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Effect of Silicon Doping in B–Te (B4Te6) Binary Ovonic Threshold Switch System / Sanghyun Ban, Sangmin Lee, Jangseop Lee, and Hyunsang Hwang / IEEE Electron Device Letters 43(4), pp. 643-646 (202204)
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6
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Strategies to Improve the Synaptic Characteristics of Oxygen-Based Electrochemical Random-Access Memory Based on Material Parameters Optimization / Jongwon Lee, Revannath Dnyandeo Nikam, Myonghoon Kwak, and Hyunsang Hwang / ACS Applied Materials and Interfaces 14(11), pp. 13450-13457 (202203)
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5
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Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf0.5Zr0.5O2/TiN device / Hyungwoo Kim, Alireza Kashir, Hojung Jang, Seungyeol Oh, Manoj Yadav, Seungwoo Lee and Hyunsang Hwang / Nano Express 3(1),015004 (202203)
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4
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Determination of damage model parameters using nano- and bulk-scale digital image correlation and the finite element method / Gang Hee Gu, Jihye Kwon, Jongun Moon, Hyeonseok Kwon, Jongwon Lee, Yongju Kim, Eun Seong Kim, Min Hong Seo, Hyunsang Hwang, Hyoung Seop Kim / Journal of Materials Research and Technology 17, pp. 392-403 (202203)
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3
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High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer / Manoj Yadav, Alireza Kashir, Seungyeol Oh, Revannath Dnyandeo Nikam, Hyungwoo Kim, Hojung Jang, Hyunsang Hwang / Nanotechnology 33(8),085206 (202202)
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2
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Prospect and challenges of analog switching for neuromorphic hardware / Writam Banerjee, Revannath Dnyandeo Nikam, and Hyunsang Hwang / Applied Physics Letters 120(6), 060501 (202202)
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1
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Enhanced switching characteristics of an ovonic threshold switching device with an ultra-thin MgO interfacial layer / Jangseop Lee, Sangmin Lee, Myonghoon Kwak, Wooseok Choi, Oleksandr Mosendz, Hyunsang Hwang / IEEE Electron Device Letters 43(2), pp. 220-223 (202202)
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