73
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Gate voltage dependence on hot carrier degradation at an elevated temperature in a device with ultrathin silicon oxynitride / Minseok Jo, Seonghyun Kim, Chunhum Cho, Man Chang, Hyunsang Hwang / Applied Physics Letters 94 (5), 053505 (200902)
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72
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Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure / Tae-Wook Kim, Hyejung Choi, Seung-Hwan Oh, Minseok Jo, Gunuk Wang, Byungjin Cho, Dong-Yu Kim, Hyunsang Hwang, Takhee Lee / Nanotechnology 20 (2), 025201 (200901)
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71
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Understanding of the Switching Mechanism of a Pt/Ni-Doped SrTiO3 Junction via Current–Voltage and Capacitance–Voltage Measurements / Dong-jun Seong, Dongsoo Lee, Myungbum Pyun, Jaesik Yoon, and Hyunsang Hwang / Japanese Journal of Applied Physics 47 (12), pp. 8749-8751 (2008.12.19)
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70
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Charge loss behavior of a metal-alumina-nitride-oxide-silicon-type flash memory cell with different levels of charge injection / Man Chang, Minseok Jo, Seonghyun Kim, Yongkyu Ju, Seungjae Jung, Joonmyoung Lee, Jaesik Yoon, Hyunsang Hwang, and Choongman Lee / Applied Physics Letters 93 (23), art. no. 232105 (2008.12.08)
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69
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Enhancement of Data Retention Time for 512-Mb DRAMs Using High-Pressure Deuterium Annealing / Hyo Sik Chang, Hyunsang Hwang / IEEE Transactions on Electron Devices 55 (12), pp. 3599-3601 (2008.12)
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68
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Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications / Myeongbum Pyun, Hyejung Choi, Ju-Bong Park, Dongsoo Lee, Musarrat Hasan, Rui Dong, Seung-Jae Jung, Joonmyoung Lee, Dong-jun Seong, Jaesik Yoon, and Hyunsang Hwang / Applied Physics Letters 93 (21), art. no. 212907 (2008.11.24)
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67
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Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam / Sung Woo Kim, Byoung Jae Park, Se Koo Kang, Bo Hyun Kong, Hyung Koun Cho, Geun Young Yeom, Sungho Heo, Hyunsang Hwang / Applied Physics Letters 93 (19), art. no. 191506 (2008.11.10)
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66
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Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory / R. Dong, D.S. Lee, M.B. Pyun, M. Hasan, H.J. Choi, M.S. Jo, D.J. Seong, M. Chang, S.H. Heo, J.M. Lee, H.K. Park, Hyunsang Hwang / Applied Physics A: Materials Science and Processing 93 (2), pp. 409-414 (2008.11.01)
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65
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The effect of KrF laser annealing within an ultrashort time on metal-alumina-nitride-oxide-silicon-type flash memory devices / Sungho Heo, Man Chang, Yongkyu Ju, Seungjae Jung, and Hyunsang Hwang / Applied Physics Letters 93 (17), art. no. 172115 (2008.10.27)
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64
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Transient reverse current phenomenon in a p-n heterojunction comprised of poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) and ZnO nanowall / Jongsun Maeng, Minseok Jo, Seok-Ju Kang, Min-Ki Kwon, Gunho Jo, Tae-Wook Kim, Jaeduck Seo, Hyunsang Hwang, Dong-Yu Kim, Seong-Ju Park, Takhee Lee / Applied Physics Letters 93 (12), art. no. 123109 (2008.09.22)
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63
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Study of Fluorine Incorporation in the Blocking Oxide of MANOS-Type Flash Memory Devices / Man Chang, Joonmyoung Lee, Yongkyu Ju, Seungjae Jung, Hyejung Choi, Minseok Jo, and Hyunsang Hwang / Electrochemical and Solid-State Letters 11 (12), pp. H320-H322 (2008.09.17)
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62
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Effect of ruthenium oxide electrode on the resistive switching of Nb-doped strontium titanate / Musarrat Hasan, Rui Dong, H. J. Choi, D. S. Lee, D.-J. Seong, M. B. Pyun, and Hyunsang Hwang / Applied Physics Letters 93 (5), art. no. 052908 (2008.08.04)
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61
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Laser Annealing on Ti Electrode: Impact on Ti/HfO2/SiO2 n-type MOSFET / Sungho Heo, R. Dong, Musarrat Hasan, Hyunsang Hwang, S. D. Park, and G. Y. Yeom / Electrochemical and Solid-State Letters 11 (10), pp. H276-H279 (2008.07.25)
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60
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Reliable Organic Nonvolatile Memory Device Using a Polyfluorene-Derivative Single-Layer Film / Tae-Wook Kim, Seung-Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong-Yu Kim, and Takhee Lee / IEEE Electron Device Letters 29 (8), pp. 852-855 (2008.07.22)
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59
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Impact of oxygen incorporation at the Si3N4/Al2O3 interface on retention characteristics for nonvolatile memory applications / Man Chang, Yongkyu Ju, Joonmyoung Lee, Seungjae Jung, Hyejung Choi, Minseok Jo, Sanghun Jeon, and Hyunsang Hwang / Applied Physics Letters 93 (2), art. no. 022101 (2008.07.14)
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58
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Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient / Joonmyoung Lee, Hokyung Park, Hyejung Choi, Musarrat Hasan, Minseok Jo, Man Chang, Byoung Hun Lee, Chang Seo Park, Chang Yong Kang, and Hyunsang Hwang / Applied Physics Letters 92 (26), art. no. 263505 (2008.06.30)
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57
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Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices / Tae-Wook Kim, Seung-Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong-Yu Kim, and Takhee Lee / Applied Physics Letters 92 (25), art. no. 253308 (2008.06.23)
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56
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Memory characteristics of a self-assembled monolayer of Pt nanoparticles as a charge trapping layer / Hyejung Choi, Byung-Sang Choi, Tae-Wook Kim, Seung-Jae Jung, Man Chang, Takhee Lee, and Hyunsang Hwang / Nanotechnology 19 (30), art. no. 305704 (2008.06.12)
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55
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Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures / Musarrat Hasan, Rui Dong, H. J. Choi, D. S. Lee, D.-J. Seong, M. B. Pyun, and Hyunsang Hwang / Applied Physics Letters 92 (20), art. no. 202102 (2008.05.19)
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54
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Improved Memory Characteristics of Ge Nanocrystals Using a LaAlO3 Buffer Layer / Hyejung Choi, Man Chang, Minseok Jo, Seung-Jae Jung, and Hyunsang Hwang / Electrochemical and Solid-State Letters 11 (6), pp. H154-H156 (2008.04.03)
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