Integrated Logic Circuits Based on Wafer-Scale 2D-MoS₂ FETs Using Buried-Gate Structures / Ju-Ah Lee; Jongwon Yoon; Seungkwon Hwang; Hyunsang Hwang; Jung-Dae Kwon; Seung-Ki Lee; Yonghun Kim  / Nanomaterials, 13(21), 2870 (202311) 

Improved Switching Uniformity of SCLC-RRAM Using the Vertically Formed Nanoscale 2DEG Electrode and Control of Oxygen Vacancy Distribution / Jiho Kim, Ohhyuk Kwon, Kyumin Lee, Hyunsang Hwang  / ACS Applied Electronic Materials, 5(11), 6178–6188 (202310) 

Exploring the Cutting-Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material-to-Device Engineering / Revannath Dnyandeo Nikam, Jongwon Lee, Kyumin Lee, Hyunsang Hwang  / Small, 19(40), 2302593 (202310) 

Defect Engineering of BTe Ovonic Threshold Switch (OTS) with Nitrogen Doping for Improved Electrical and Reliability Performance / Jangseop Lee; Sanghyun Ban; Tae Hoon Lee; Hyunsang Hwang / IEEE Electron Device Letters, 44(9), pp. 1468–1471 (202309) 

Inherent Stochasticity of Ovonic Threshold Switch for Neuronal Dropout of Edge-AI Hardware / Dongmin Kim, Wooseok Choi, Jangseop Lee, Hyunsang Hwang / IEEE Electron Device Letters, 44(8), pp. 1372–1375 (202308) 

Understanding Controlled Ion Doping Mechanism of Vertical Sensing Electrochemical Random Access Memory Using Ion-Permeable Graphene Electrodes / Jongwon Lee; Revannath Dnyandeo Nikam; Dongmin Kim; Hyunsang Hwang / IEEE Transactions on Electron Devices, 70(7), pp. 3951–3957 (202307)

Improvement of endurance and switching speed in Hf1− x Zr x O2 thin films using a nanolaminate structure / H Jang, A Kashir, S Oh, H Hwang / Nanotechnology 33 (39), 395205

Composition optimization of Hf_xZr_1-xO₂thin films to achieve the morphotrophic phase boundary for high- k dielectrics / Seungyeol Oh ; Hojung Jang; Hyunsang Hwang / Journal of Applied Physics, 133(15), 154102 (202304)

NbO₂selector device with Ge₂Sb₂Te₅thermal barrier for low off current (300 nA) and low power operation / Ohhyuk Kwon ; Jangseop Lee ; Kyumin Lee ; Wooseok Choi ; Hyunsang Hwang / Applied Physics Letters, 122(11), 113502 (202303)

Cell Design Considerations for Ovonic Threshold Switch-Based 3-D Cross-Point Array / Sanghyun Ban; Jangseop Lee; Taehoon Kim; Hyunsang Hwang / IEEE Transactions on Electron Devices, 70(3), pp. 1034-1041 (202303)

Novel High-Speed Ternary Logic Using Step-Shaped Threshold Switch / Junjong Lee, Seongjae Heo, Hyunsang Hwang, Rock-Hyun Baek / IEEE Electron Device Letters, 44(3), pp. 368-371 (202303) 

Vacuum gap atomic switch with improved controllability of quantized conduction states and low transition energy / Sunhyeong Lee, Seungwoo Lee, and Hyunsang Hwang / AIP Advances, 13(2), 025053 (202302)

Synergy effect of microwave annealing and high-pressure hydrogen annealing on Poly-Si thin-film transistor / Sunhyeong Lee, Jongwon Lee, Junyoung Lee, Jaeduk Lee, Hyunsang Hwang / Nanotechnology 33(43),435203 (202210) 

Improvement of endurance and switching speed in Hf1- x Zr xO2thin films using a nanolaminate structure / Sunhyeong Lee, Jongwon Lee, Junyoung Lee, Jaeduk Lee, Hyunsang Hwang / Nanotechnology 33(39),395205 (202209) 

Exploiting Read Current Noise of TiOxResistive Memory by Controlling Forming Conditions for Probabilistic Neural Network Hardware / Wooseok Choi; Wonjae Ji; Seongjae Heo; Donguk Lee; Kyungmi Noh; Chuljun Lee; Jiyong Woo; Seyoung Kim; Hyunsang Hwang / IEEE Electron Device Letters 43(9), pp. 1571-1574 (202209) 

Integrate-and-Fire Neuron With Li-Based Electrochemical Random Access Memory Using Native Linear Current Integration Characteristics / Donguk Lee, Jongwon Lee, Chuljun Lee, Seyoung Kim, Hyunsang Hwang / IEEE Transactions on Electron Devices 69(9), pp. 4889-4893 (202209) 

On-Chip Integrated Atomically Thin 2D Material Heater as a Training Accelerator for an Electrochemical Random-Access Memory Synapse for Neuromorphic Computing Application / Revannath Dnyandeo Nikam*, Jongwon Lee, Wooseok Choi, Dongmin Kim, Hyunsang Hwang* /  ACS Nano 16(8), pp. 12214-12225 (202208)

Study of high-pressure hydrogen annealing effects on InGaZnO thin-film transistors / Kyumin Lee,  Laeyong Jung, Hyunsang Hwang / Applied Physics Letters 121(7), 072104 (202208) 

Effect of Stochastic Resonance on Classification Accuracy of Neural Networks Utilizing Inherent Stochasticity in Threshold Voltage of Ovonic Threshold Switching Device / Wooseok Choi, Myonghoon Kwak, Donguk Lee, Sangmin Lee, Chuljun Lee, Seyoung Kim, Hyunsang Hwang / IEEE Journal of the Electron Devices Society 10, pp. 666-669 (202208)

Atomic Threshold Switch Based on All-2D Material Heterostructures with Excellent Control Over Filament Growth and Volatility / Revannath Dnyandeo Nikam and Hyunsang Hwang / Advanced Functional Materials 32(29) 2201749 (202207)