Semiconductor Integrated Device & Process Lab.

Conferences

Home Publications Conferences

Conferences

60
Effects of high pressure hydrogen and deuterium annealing on nMOSFET with Hf-based gate dielectrics, H. Park, B. Lee, M. Gardner, and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 748, 2004.9.
59
Triple high-k stacks (Al2O3/HfO2/Al2O3) with high pressure (10 atm) H2 and D2 annealing for SONOS engine flash memory device applications, S. Jeon, S. Choi, H. Hwang, J. H. Han, H. Chae, S. D. Chae, J. H. Kim, M. K. Kim, Y. S. Jeong, Y. Park, S. Seo, J. W. Lee, and C. W. Kim, IEEE Conference on Nanotechnology, pp. 53, 2004.8.
58
The growth kinetics of HfO2 films on Si(100) grown by atomic-layer deposition using in-situ medium energy ion scattering, H. S. Chang, H. Hwang, M. H. Cho, and D. W. Moon, Materials Research Society, 2004.4.
57
Effect of high-pressure hydrogen annealing on non-volatile memory device with silicon QD embedded in SiN, S. Choi, C. Cho, H. Park, M. Chang, S. Jeon, C. Kim, S. Park, and H. Hwang, IEEE Si Nanoelectronics Workshop, pp. 105, 2004.6.
56
Low temperature activated Ga and Sb ion-implanted shallow junctions, S. G. Tavakoli, K. Lee, S. Baek and H. Hwang, Int. Workshop on Junction Technology, pp. 104, 2004. 3.
55
Characteristics of low-temperature preannealing effects on laser-annealed p+/n and n+/p ultra-shallow junctions, S. Baek, S. Heo, H. Choi and H. Hwang, Int. Workshop on Junction Technology, pp. 54, 2004. 3.
54
Effects of high pressure hydrogen and deuterium annealing on HfO2 gate dielectric, H. Park, H. Yang, H. Sim, C. B. Samantaray, H. Hwang, 34th IEEE Semiconductor Interface Specialists Conference, P24, 2003.12.04
53
Reliability characteristics of an HfO2/SiO2 stack gate dielectric annealed in a deuterium ambient, H. Park, H. Yang, H. Sim and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM) 2003. 9.
52
Excellent electrical characteristics of SONOS-engine flash memory with high-k dielectric as trapping and blocking layer, M. Cho, S. Choi, J. W. Kim and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM) 2003. 9.
51
Improved electrical properties of SONOS-engine flash memory using high-k dielectric as charge trapping layer and blocking layer, S. Choi, M. Cho, H. Hwang, Electronics Materials Conference, 2003.06
50
Epitaxial SrTiO3 on Silicon with EOT of 5.4 for MOS Gate Dielectric Applications, S. Jeon, F. J. Walker, C. A. Billman, R. A. Mckee, and H. Hwang, Internation Electron Device Meeting (IEDM) 2002.12
49
Hygroscopic nature of lanthanide oxide (Ln2O3) and its effect on electrical properties of Ln2O3, S. Jeon, M. Cho, and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM), pp. 744, 2002.9
48
Formation of shallow junction using spin coating SPD method for sub 0.1 micron SOI MOSFET, K. Im, W. J. Cho, S. Lee, S. Maeng, M. G. Jang, T. W. Kang, K. Park, and H. Hwang, Electronic Materials Conference, 2002.6
47
Electrical and materials characteristics of Pr2O3-SiO2, S. Jeon and H. Hwang, Electronic Materials Conference, 2002.6
46
High quality ZrO2 gate dielectric for SiGe MOS devices, S. Choi, S. Jeon, and H. Hwang, MRS Spring meeting, Symposium Proceeding 2002.4
45
High-k gate dielectric prepared by low temperature wet oxidation of ultrathin metal nitride, S. Choi, S. Jeon, and H. Hwang, MRS Spring meeting, Symposium Proceeding 2002.4
44
The influence of low temperature pre-annealing on the defect removal and the reduction of junction depth in excimer laser annealing, S. Baek, T. Jang, and H. Hwang, MRS Spring meeting, Symposium Proceeding, 2002.4
43
Excellent electrical characteristics of Lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and Lanthanide-doped oxide for MOS gate dielectric applications, S. Jeon, K. Im, H. Yang, H. Lee, H. Sim, S. Choi, T. Jang, and H. Hwang, Internation Electron Device Meeting (IEDM) 2001.12
42
Ultrathin nitride-nanolaminate (Al2O3/ZrO2/Al2O3) for gate dielectric application, S. Jeon, H. Yang, H. Chang, D. G. Park, K. Y. Lim, I. S. Yeo, H. Koh, H. W. Yeom, and H. Hwang,  Int. Conf. of Solid state device & Materials (SSDM), pp. 178, 2001
41
Effect of plasma nitridation on the conduction mechanism of Ta2O5 gate dielectric, W. H. Lee, K. Im, S. Jeon, and H. Hwang, Int. Conf. of Solid state device & Materials, pp. 418, 2001