Semiconductor Integrated Device & Process Lab.

Conferences

Home Publications Conferences

Conferences

9
Structural evaluation of CVD WSix and its effect on polycide line resistance, Proceeding of International Symposium on Semiconductor and Integrated Circuit, Tokyo, Japan, p. 96, 1995
8
Fluorine induced reliability degradation of W-polycide gate CMOS device, Proceeding of International Symposium on Semiconductor and Integrated Circuit, Tokyo, Japan, p. 102, 1995
7
Electrical characteristics of ultra short channel CMOS device for giga-bit DRAM applications, Proceeding of International Symposium on Semiconductor and Integrated Circuit, Tokyo, Japan, p. 84, 1995
6
Effect of channeling of halo ion implantation on threshold voltage instability of MOSFETs, Proceeding of International Symposium on Semiconductor and Integrated Circuit, Tokyo, Japan, p. 79, 1995
5
Anormalous temperature dependence of nMOSFET lifetime under hot electron stress, Proceeding of European Solid State Device Research Conference, p. 381, 1994
4
Universal behavior of hot-carrier degradation in LDD NMOSFETs, Proceeding of SSDM Tech Dig., p. 35, 1993.
3
Ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation in N2O for ULSI application, Materials Research Soc., Symposium Proceeding. vol. 224, p. 379, 1991.
2
High quality ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N2O, Proceeding of SSDM Tech Dig., p. 1155, 1990
1
Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N2O, H. Hwang et al., Proceeding of IEEE IEDM Tech Dig., p. 421, 1990.