425
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424
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423
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422
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421
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420
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419
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418
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417
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Surface Diffusion and Epitaxial Self‐Planarization for Wafer‐Scale Single‐Grain Metal Chalcogenide Thin Films / Anupam Giri, Manish Kumar, Jaeseon Kim, Monalisa Pal, Writam Banerjee, Revannath Dnyandeo Nikam, Junghyeok Kwak, Minsik Kong, Seong Hun Kim, Kaliannan Thiyagarajan, Geonwoo Kim, Hyunsang Hwang, Hyun Hwi Lee, Donghwa Lee, Unyong Jeong / Advanced Materials 33(35),2102252 (202109)
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416
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415
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Deep Insight into Steep-Slope Threshold Switching with Record Selectivity (>4 × 1010) Controlled by Metal-Ion Movement through Vacancy-Induced-Percolation Path: Quantum-Level Control of Hybrid-Filament / Writam Banerjee, Seong Hun Kim, Seungwoo Lee, Sangmin Lee, Donghwa Lee, Hyunsang Hwang / Advanced Functional Materials 31(37),2104054 (202109)
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414
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413
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Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device / Hyungwoo Kim, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang / Nanotechnology 32(31),315712 (202105)
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412
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All-Solid-State Oxygen Ion Electrochemical Random-Access Memory for Neuromorphic Computing / Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunsang Hwang / Advanced Electronic Materials 7(5),21000142 (202105)
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411
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410
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An Efficient Approach Based on Tuned Nanoionics to Maximize Memory Characteristics in Ag-Based Devices / Writam Banerjee, Seong Hun Kim, Seungwoo Lee, Donghwa Lee, Hyunsang Hwang / Advanced Electronic Materials 7(4), 2100022 (202104)
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409
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Improved turn-off speed and uniformity of atomic threshold switch device by agse electrode and bipolar pulse forming / Seungyeol Oh; Seungwoo Lee; Hyunsang Hwang / IEEE Journal of the Electron Devices Society 9, pp. 864-867 (202109)
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408
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Hybrid memory characteristics of NbOx threshold switching devices / Sangmin Lee, Hyunsang Hwang, Jiyong Woo / Applied Physics Letters 119(9),092102 (202108)
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407
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Towards an ideal high-κ HfO2-ZrO2-based dielectric / Alireza Kashir, Mehrdad Ghiasabadi Farahani, Hyunsang Hwang / Nanoscale 13(32), pp. 13631–13640 (202108)
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406
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Improvement of Synaptic Properties in Oxygen‐Based Synaptic Transistors Due to the Accelerated Ion Migration in Sub‐Stoichiometric Channels / Jongwon Lee, Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunjeong Kwak, Seyoung Kim, Hyunsang Hwang / Advanced Electronic Materials 7(8),2100219 (202108)
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