Semiconductor Integrated Device & Process Lab.

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Conferences

80
Ultra-shallow p+/n junction prepared by low energy BF3 plasma doping and KrF Excimer laser annealing, D.Lee,S.Baek,S.Heo,C.Cho,G.Buh,T.Park,Y.Shin and H.Hwang, 2005 NAIST/GIST Joint Symposium on advanced materials, pp.17, 2005.11.3~4 (CA)
79
Improvement of Mobility on ultra-thin body SOI MOSFETs by Use of High Pressure Hydrogen annealing, Yunik Son, Md. Shahriar Rahman, Kiju Im, Man Chang, Hokyoung Park and Hyunsang Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 46, 2005.9. (CA,MDSN) 
78
Ultra-shallow p+/n junction prepared by low energy BF3 plasma doping(PLAD) and KrF excimer laser annealing, Dongkyu Lee, Sungkweon Baek, Changhee Cho, Sungho Heo and Hyunsang Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 530, 2005.9. (CA,BK,samsung)
77
Effect of SiO2 underneath layer on LaAlO3 High Dielectric constant material for gate oxide application, Musarrat Hasan and Hyunsang Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 490, 2005.9. (CA,NO)
76
Metal-Nitride(TiN) nanocrystals embeded in Al2O3 for charge trapping layer of nonvolatile memory devices, S.Choi, S.S.Kim,M.Chang,D.Y.Kim,H.Hwang, S.Jeon,C.Kim, 2005 GIST/KAIST/KU/TU joint symposium on advanced materials, pp.63, 2005.8.18~20. (CA)
75
Electrical characteristics of 1T/1R RRAM device usingg ZrOx, Hyejung Choi, Dongsoo Lee, Yunik Son and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding 2005.4
74
Fabrication of n+p junction diode using plasma doping followed by low temperature annealing, Kiju Im, Won-ju Cho, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Seongjae Lee, Sungkweon Baek and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding 2005.4
73
Germanium ultra-shallow n+p junction formed by low energy plasma doping and laser annealing, Sungheo heo, Sungkweon Baek, Dongkyu Lee, Hyunsuk Jung and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding 2005.4
72
Study of the Hydrogen effect on dopant activation for the plasma doping and ion implantation, Sungkweon Baek, Sungheo Heo, Dongkyu Lee, Won-Ju Cho, Kiju Im, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Seongjae Lee and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding 2005.4 ring
71
 High work-function metal gate and high-k dielectric for charge trap flash memory device applications, S. Jeon, J. H. Han, J. Lee, C. J. Choi, S. Choi, H. Hwang, and C. Kim, 2005 ESSDERC, pp. 325, Sep. 2005 (ETC, NO)
70
 Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric, H. Park, M. S. Rahman, M. Chang, B. H. Lee, M. Gardner, C. D. Young, H. Hwang, 43rd Annual International Reliability Physics Symposium, pp. 646-647, 2005.06 (CA, BK 21, System IC 2010)
69
The impact of work-function of metal gate and fixed oxide charge of high-k blocking dielectric on memory properties of NAND engine charge trap flash memroy devices, S. Jeon, J. H. Han, J. Lee, J. Hyun, J. H. Kim, Y. S. Jeong, H. S. Chae, S. D. Chae, M. K. Kim, J. W. Lee, S. Choi, M. Jang, H. Hwang, C. Kim, 63rd Annual Device Research Conference, pp. 39-40, 2005.06 (ETC, NO)
68
Reversible resistance switching of the non-stoichiometric ZrOx and SrTiOx for non-volatile memory applications, Dongsoo Lee, Dooho Choi, Hyejung Choi, Hyunjun Sim, Hyunsang Hwang, 63rd Annual Device Research Conference, pp. 45-46, 2005.06 (CA, National R&D project on NVM device by MOCIE)
67
Improved reliability characteristics of ultrathin high-k MOSFET with TiN gate by employing two step post deposition annealing process, M. S. Rahman, H. Park, M. Chang, R. Choi, B. H. Lee, Jack C. Lee, H. Hwang, 63rd Annual Device Research Conference, pp. 85-86, 2005.06 (CA, SEMATECH & AMRC project)
66
Hydrogen effect on ultra-shallow arsenic n+/p junction formed by AsH3 plasma doping (PLAD), S. Heo, S. Baek, D. Lee, G. Buh, Y. Sin, H. Hwang, 5th International Workshop on Junction Technology 2005, pp. 65-66, 2005.06 (CA, Samsung Electronics)
65
 N+/P Ultra-Shallow Junction with Low Energy Bismuth Ion-implantation at Low Temperature, D. Lee, S. Baek, S. G. Tavakoli, S. Heo, H. Hwang, 5th International Workshop on Junction Technology 2005, pp. 37-38, 2005.06 (CA, Samsung Electronics)
64
Al2O3 with Metal-Nitride Nanocrystals as a Charge Trapping Layer of MONOS-engine Nonvolatile Memory Devices, Sangmoo Choi, Seok-Soon Kim, Hyundeok Yang, Man Chang, Sanghun Jeon, Chungwoo Kim, Dong-Yu Kim, and Hyunsang Hwang, Insulating Films On Semiconductors, pp. 264-267, 2005.06 (CA, BK 21, TND)
63
Reproducible resistance switching characteristics of pulsed laser-deposited polycrystalline Nb2O5, Hyunjun Sim, Dooho Choi, Dongsoo Lee, Musarrat Hasan, Chandan. B. Samantaray, Hyunsang Hwang, Insulating Films On Semiconductors, pp. 260-263, 2005.06 (CA, 0.1 Terabit NVM project)
62
Ti metal gate with appropriate workfunction for ALD-HfO2 NMOS devices, Hyundoek Yang, Sangmoo Choi, Sungho Huh, Hyunsang Hwang, 35th IEEE Semiconductor Interface Specialists Conference, Late News Poster #5, 2004.12 (CA, System IC 2010)
61
High pressure H2/D2 annealed SONOS nonvolatile memory devices, S. Choi, M. Jang, H. park, S. Jeon, J. Kim, C. Kim, and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 652, 2004.9.