Atomic Threshold Switch Based on All-2D Material Heterostructures with Excellent Control Over Filament Growth and Volatility / Revannath Dnyandeo Nikam and Hyunsang Hwang / Advanced Functional Materials 32(29) 2201749 (202207) 

Nonvolatile Frequency-Programmable Oscillator with NbO2 and Li-based Electro-Chemical Random Access Memory for Coupled Oscillators-Based Temporal Pattern Recognition System / Donguk Lee, Jongwon Lee, Sangmin Lee,. Chuljun Lee, Sungjae Heo, Hyunsang Hwang / IEEE Electron Device Letters 43(7), pp. 1041-1044 (202207) 

Linear Frequency Modulation of NbO2-Based Nanoscale Oscillator With Li-Based Electrochemical Random Access Memory for Compact Coupled Oscillatory Neural Network / Donguk Lee, Myonghoon Kwak, Jongwon Lee, Jiyong Woo and Hyunsang Hwang / Frontiers in Neuroscience 2022(16), 939687 (202206)

 

Effect of the Oxygen Composition Control of HfOx Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications / Seungwoo Lee, Seong Hun Kim,Seungyeol Oh,Donghwa Lee,Hyunsang Hwang / Advanced Electronic Materials 8(5), 2101257 (202205)​

A grease for domain walls motion in HfO2-based ferroelectrics​ / Alireza Kashir, Mehrdad Ghiasabadi Farahani, Ján Lančok, Hyunsang Hwang, Stanislav Kamba​ / Nanotechnology​ 33(15),155703​ (202204) 

Improved Synaptic Characteristics of Oxide-Based Electrochemical Random Access Memory at Elevated Temperatures Using Integrated Micro-Heater / Jongwon Le,; Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunsang Hwang / IEEE Transactions on Electron Devices 69(4), pp. 2218-2221 (202204)​

Effect of Silicon Doping in B–Te (B4Te6) Binary Ovonic Threshold Switch System / Sanghyun Ban, Sangmin Lee, Jangseop Lee, and Hyunsang Hwang / IEEE Electron Device Letters 43(4), pp. 643-646 (202204) 

Strategies to Improve the Synaptic Characteristics of Oxygen-Based Electrochemical Random-Access Memory Based on Material Parameters Optimization / Jongwon Lee, Revannath Dnyandeo Nikam, Myonghoon Kwak, and Hyunsang Hwang / ACS Applied Materials and Interfaces 14(11), pp. 13450-13457 (202203)​

Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf_0.5Zr_0.5O₂/TiN device / Hyungwoo Kim, Alireza Kashir, Hojung Jang, Seungyeol Oh, Manoj Yadav, Seungwoo Lee and Hyunsang Hwang / Nano Express 3(1),015004 (202203) 

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device ​/ Hyungwoo Kim, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang​ / Nanotechnology 32(31),315712 (202105)​

All-Solid-State Oxygen Ion Electrochemical Random-Access Memory for Neuromorphic Computing​ / Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunsang Hwang / Advanced Electronic Materials 7(5),21000142 (202105)​​

Improved synaptic functionalities of Li-based nano-ionic synaptic transistor with ultralow conductance enabled by Al2O3 barrier layer / Kyumin Lee, Myounghoon Kwak, Wooseok Choi, Chuljun Lee, Jongwon Lee, Sujung Noh, Jisung Lee, Hansaem Lee, Hyunsang Hwang / Nanotechnology​​ 32(27),275201 (202104)

An Efficient Approach Based on Tuned Nanoionics to Maximize Memory Characteristics in Ag-Based Devices​ / Writam Banerjee, Seong Hun Kim, Seungwoo Lee, Donghwa Lee, Hyunsang Hwang​ / Advanced Electronic Materials​​ ​7(4), 2100022 (202104)

Determination of damage model parameters using nano- and bulk-scale digital image correlation and the finite element method / Gang Hee Gu, Jihye Kwon, Jongun Moon, Hyeonseok Kwon, Jongwon Lee, Yongju Kim, Eun Seong Kim, Min Hong Seo, Hyunsang Hwang, Hyoung Seop Kim / Journal of Materials Research and Technology 17, pp. 392-403 (202203)​

​High polarization and wake-up free ferroelectric characteristics in ultrathin Hf_0.5Zr_0.5O₂ devices by control of oxygen-deficient layer / Manoj Yadav, Alireza Kashir, Seungyeol Oh, Revannath Dnyandeo Nikam, Hyungwoo Kim, Hojung Jang, Hyunsang Hwang​ / ​Nanotechnology 33(8),085206 (202202) 

Prospect and challenges of analog switching for neuromorphic hardware / Writam Banerjee, Revannath Dnyandeo Nikam, and  Hyunsang Hwang / Applied Physics Letters 120(6), 060501 (202202) 

Enhanced switching characteristics of an ovonic threshold switching device with an ultra-thin MgO interfacial layer / Jangseop Lee, Sangmin Lee, Myonghoon Kwak, Wooseok Choi, Oleksandr Mosendz, Hyunsang Hwang​ / IEEE Electron Device Letters​  43(2), pp. 220-223 (​​202202) 

Hf₁–_xZr_xO₂/ZrO₂ Nanolaminate Thin Films as a High-κ Dielectric / Alireza Kashir, Mehrdad Ghiasabadi Farahani, Stanislav Kamba, Manoj Yadav, Hyunsang Hwang​ / ACS Applied Electronic Materials​ 3(12),5632-5640​ (202112) 

Ionic Sieving Through One‐Atom‐Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing / Revannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, Writam Banerjee, Myonghoon Kwak, Manoj Yadav, Hyunsang Hwang​ / Small​ 17(44),2103543​ ​(202111) 

A CMOS-compatible morphotropic phase boundary / Alireza Kashir, Hyunsang Hwang​ / Nanotechnology​ 32(44),445706​ (202110)