Semiconductor Integrated Device & Process Lab.

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Journals

425

Effect of the Oxygen Composition Control of HfOx Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications / Seungwoo Lee, Seong Hun Kim, Seungyeol Oh, Donghwa Lee, Hyunsang Hwang​ / Advanced Electronic Materials 2101257​ (202201)

424

Enhanced switching characteristics of an ovonic threshold switching device with an ultra-thin MgO interfacial layer / Jangseop Lee, Sangmin Lee, Myonghoon Kwak, Wooseok Choi, Oleksandr Mosendz, Hyunsang Hwang​ / IEEE Electron Device Letters(202112)

423

Hf1–xZrxO2/ZrO2 Nanolaminate Thin Films as a High-κ Dielectric / Alireza Kashir, Mehrdad Ghiasabadi Farahani, Stanislav Kamba, Manoj Yadav, Hyunsang Hwang​ / ACS Applied Electronic Materials​ 3(12),5632-5640​ (202112)

422

A grease for domain walls motion in HfO2-based ferroelectrics Alireza Kashir, Mehrdad Ghiasabadi Farahani, Ján Lančok, Hyunsang Hwang, Stanislav Kamba​ / Nanotechnology​ 33(15),155703​ (202201)

421

High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0. 5Zr0. 5O2 devices by control of oxygen-deficient layer / Manoj Yadav, Alireza Kashir, Seungyeol Oh, Revannath Dnyandeo Nikam, Hyungwoo Kim, Hojung Jang, Hyunsang Hwang​ / IOP Publishing33(8),085206 (202112)

420

Ionic Sieving Through One‐Atom‐Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing / Revannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, Writam Banerjee, Myonghoon Kwak, Manoj Yadav, Hyunsang Hwang​ / Small17(44),2103543​(202111)

419

Improved Turn-Off Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse Forming / Seungyeol Oh, Seungwoo Lee, Hyunsang Hwang​ / IEEE Journal of the Electron Devices Society Volume 9, 864-867​ (202109)

418

Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing / Revannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, Writam Banerjee, Myonghoon Kwak, Manoj Yadav, Hyunsang Hwang​ / arXiv e-prints 2109.14935 (202109)

 

417

Surface Diffusion and Epitaxial Self‐Planarization for Wafer‐Scale Single‐Grain Metal Chalcogenide Thin Films ​/ Anupam Giri, Manish Kumar, Jaeseon Kim, Monalisa Pal, Writam Banerjee, Revannath Dnyandeo Nikam, Junghyeok Kwak, Minsik Kong, Seong Hun Kim, Kaliannan Thiyagarajan, Geonwoo Kim, Hyunsang Hwang, Hyun Hwi Lee, Donghwa Lee, Unyong Jeong​ / Advanced Materials33(35),2102252​ (202109)

416

Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor / Chuljun Lee, Wooseok Choi, Myunghoon Kwak, Seyoung Kim, Hyunsang Hwang​ / Applied Physics Letters​ 119(10),103503​ (202109)

415

Deep Insight into Steep-Slope Threshold Switching with Record Selectivity (>4 × 1010) Controlled by Metal-Ion Movement through Vacancy-Induced-Percolation Path: Quantum-Level Control of Hybrid-Filament Writam Banerjee, Seong Hun Kim, Seungwoo Lee, Sangmin Lee, Donghwa Lee, Hyunsang Hwang / Advanced Functional Materials31(37),2104054​ (202109)

414

A CMOS-compatible morphotropic phase boundary / Alireza Kashir, Hyunsang Hwang​ / Nanotechnology​ 32(44),445706​ (202108)

413

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device ​/ Hyungwoo Kim, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang​ / Nanotechnology 32(31),315712 (202105)​

412

All-Solid-State Oxygen Ion Electrochemical Random-Access Memory for Neuromorphic Computing Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunsang Hwang / Advanced Electronic Materials 7(5),21000142 (202105)

411

Improved synaptic functionalities of Li-based nano-ionic synaptic transistor with ultralow conductance enabled by Al2O3 barrier layer / Kyumin Lee, Myounghoon Kwak, Wooseok Choi, Chuljun Lee, Jongwon Lee, Sujung Noh, Jisung Lee, Hansaem Lee, Hyunsang Hwang / Nanotechnology​ 32(27),275201 (202104)

410

An Efficient Approach Based on Tuned Nanoionics to Maximize Memory Characteristics in Ag-Based Devices Writam Banerjee, Seong Hun Kim, Seungwoo Lee, Donghwa Lee, Hyunsang Hwang​ / Advanced Electronic Materials ​7(4), 2100022 (202104)

409

Improved turn-off speed and uniformity of atomic threshold switch device by agse electrode and bipolar pulse forming / Seungyeol Oh; Seungwoo Lee; Hyunsang Hwang / IEEE Journal of the Electron Devices Society 9, pp. 864-867 (202109)​

408

Hybrid memory characteristics of NbOx threshold switching devices / Sangmin Lee, Hyunsang Hwang, Jiyong Woo​ / Applied Physics Letters​ 119(9),092102​ (202108) 

407

Towards an ideal high-κ HfO2-ZrO2-based dielectric / Alireza Kashir, Mehrdad Ghiasabadi Farahani, Hyunsang Hwang / Nanoscale 13(32), pp. 13631–13640 (202108)

406

Improvement of Synaptic Properties in Oxygen‐Based Synaptic Transistors Due to the Accelerated Ion Migration in Sub‐Stoichiometric Channels​ / Jongwon Lee, Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunjeong Kwak, Seyoung Kim, Hyunsang Hwang / Advanced Electronic Materials​ ​7(8),2100219 (202108)