Semiconductor Integrated Device & Process Lab.

Journals

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Journals

365

Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes / Jaesung Park, Chuljun Lee, Myonghoon Kwak, Solomon Amsalu Chekol, Seokjae Lim, Myungjun Kim, Jiyong Woo, Hyunsang Hwang, Daeseok Lee / Nanotechnology  30(30),305202 (6pp) (201907) 

364

Improved Endurance of HfO2-based Metal-Ferroelectric-Insulator-Silicon structure by High-Pressure Hydrogen Annealing / Seungyeol Oh, Jeonghwan Song, In Kyeong Yoo, Hyunsang Hwang / IEEE Electron Device Letters 40(7),8706981, pp. 1092-1095 (201907) 

363

Stuck-at-Fault Tolerant Schemes for Memristor Crossbar Array-Based Neural Networks / Injune Yeo , Myonglae Chu , Sang-Gyun Gi , Hyunsang Hwang , and Byung-Geun Lee / IEEE Transactions on Electron Devices 66(7),8715385, pp. 2937-2945 (201907) 

362

3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications / Jongmyung Yoo, Seong Hun Kim, Solomon Amsalu Chekol, Jaehyuk Park, Changhyuck Sung, Jeonghwan Song, Donghwa Lee, Hyunsang Hwang / Advanced Electronic Materials 1900196 (201905)

361

Understanding of Proton Induced Synaptic Behaviors in Three–terminal Synapse Device for Neuromorphic Systems / Jongwon Lee, Seokjae Lim, Myonghoon Kwak, Jeonghwan Song and Hyunsang Hwang / Nanotechnology 30 (25) 255202 (6pp) (201904) 

360

Investigation of I−V Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications / Changhyuck Sung, Andrea Padovani, Bastien Beltrando, Donguk Lee, Myunghoon Kwak, Seokjae Lim, Luca Larcher, Vincenzo Della Marca, Hyunsang Hwang / IEEE Journal of the Electron Devices Society  7, 8658233, pp. 404-408 (2019) 

359

An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application / Solomon Amsalu Chekol, Jeonghwan Song, Jongmyung Yoo, Seokjae Lim, and Hyunsang Hwang / Applied Physics Letters 114(10),102106 (201903) 

358

Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory / Sangmin Lee, Jeonghwan Song, Seokjae Lim, Solomon Amsalu Chekol, Hyunsang Hwang / Solid-State Electronics  153, pp. 8-11 (201903)

357

Hardware implementation of neural network using pre-programmed resistive device for pattern recognition / Wooseok Choi, Kibong Moon, Myonghoon Kwak, Changhyuck Sung, Jongwon Lee,Jeonghwan Song, Jaesung Park, Solomon Amsalu Chekol, Hyunsang Hwang / Solid-State Electronics  153, pp. 79-83 (201903) 

356

Various Threshold Switching device for Integrate and Fire Neuron Applications / Donguk Lee, Myonghoon Kwak, Kibong Moon, Wooseok Choi, Jaehyuk Park, Jongmyung Yoo, Jeonghwan Song, Seokjae Lim, Changhyuck Sung,  Writam Banerjee, Hyunsang Hwang / Advanced Electronic Materials 1800866, pp.1-7 (201902) 

355

Synaptic and neuromorphic functions: general discussion / Alexandra I. Berg, Stefano Brivio, Simon Brown, Geoffrey Burr, Sweety Deswal, Jonas Deuermeier, Ella Gale, Hyunsang Hwang, Daniele Ielmini, Giacomo Indiveri, Anthony J. Kenyon, Asal Kiazadeh, Itir Koymen, Michael Kozicki, Yang Li,Daniel Mannion, Themis Prodromakis, Carlo Ricciardi, Sebastian Siegel, Maximilian Speckbacher, Ilia Valov, Wei Wang, R. Stanley Williams, Dirk Wouters and Yuchao Yang / Faraday discussions  213, 553-578 (201902)

354

RRAM-based synapse devices for neuromorphic systems / K. Moon, S. Lim, J. Park, C. Sung, S. Oh, J. Woo, J. Lee and H. Hwang / Faraday discussions 213, pp. 421-451 (201902) 

353

W/WO3-x based three-terminal synapse device with linear conductance change and high on/off ratio for neuromorphic application / Jinwon Go, Yonghun Kim, Myonghoon Kwak, Jeonghwan Song, Solomon Amsalu Chekol, Jung-Dae Kwon and Hyunsang Hwang / Applied Physics Express 12(2),026503 (201902)

352

NbO2-based frequency storable coupled oscillators for associative memory application / Donguk Lee, Euijun Cha, Jaehyuk Park, Changhyuck Sung, Kibong Moon, Solomon Amasalu Chekol, and Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1), pp. 250-253  (201812)

351

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr0.7Ca0.3MnO3 Material Improvements and Device Measurements / Kibong Moon, Alessandro Fumarola, Severin Sidler, Junwoo Jang, Pritish Narayanan, Robert M Shelby, Geoffrey W Burr, Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1),8168326, pp. 146-155 (201812) 

350
Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training Accuracy / Alessandro Fumarola, Severin Sidler, Kibong Moon, Junwoo Jang, Robert M Shelby, Pritish Narayanan, Yusuf Leblebici, Hyunsang Hwang, Geoffrey W Burr /  IEEE Journal of the Electron Devices Society 6(1),8171732, pp. 169-178 (201812)
349
Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy / Niloufar Raeis‐Hosseini, Seokjae Lim, Hyunsang Hwang, Junsuk Rho / Advanced Electronic Materials 4(11),1800360 (201811)
348

Perspective: A review on memristive hardware for neuromorphic computation / Changhyuck Sung,  Hyunsang Hwang, and  In Kyeong Yoo / Journal of Applied Physics  124(15),151903 (201810)

347

Implementation of Convolutional Kernel Function Using 3-D TiOx Resistive Switching Devices for Image Processing  / Myonghoon Kwak , Jaesung Park , JiyongWoo , and Hyunsang Hwang / IEEE Transactions on Electron Devices  65(10), 8435959, pp. 4716-4718  (201810) 

346

Improved Synaptic Behavior of CBRAM using Internal Voltage Divider for Neuromorphic Systems / Seokjae Lim , Myounghoon Kwak , and Hyunsang Hwang / IEEE Transactions on Electron Devices 65(9),8424473, pp. 3976-3981  (201809)