Semiconductor Integrated Device & Process Lab.

Journals

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Journals

325

Nanometer-Scale Phase Transformation Determines Threshold and Memory Switching Mechanism / Byeong-Gyu Chae, Jae-Bok Seol,* Jeong-Hwan Song, Kyungjoon Baek, Sang-Ho Oh, Hyunsang Hwang, and Chan-Gyung Park / Advanced Materials 29(30),1701752 (201708)

324

Improved Conductance Linearity and Conductance Ratio of 1T2R Synapse Device for Neuromorphic Systems / Kibong Moon, Myounghoon Kwak, Jaesung Park, Dongwook Lee, and Hyunsang Hwang / IEEE Electron Device Letters 38(8), pp. 1023-1026 (201708)

323

Automatic ReRAM SPICE Model Generation From Empirical Data for Fast ReRAM-Circuit Coevaluation / Jaehyun Seo, Sangheon Lee, Kwangmin Kim, Sooeun Lee, Hyunsang Hwang, and Byungsub Kim / IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25(6),7840076, pp. 1821-1830 (201706) 

322

Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high on/off ratio for selector application / Jaehyuk Park, Tobias Hadamek, Agham B. Posadas, Euijun Cha, Alexander A. Demkov & Hyunsang Hwang / Scientific Reports 7(1), 4068 (201706)​

321

Effect of a self-limited reset operation on the reset breakdown characteristics of a monolithically integrated 1T1R RRAM / Changhyuck Sung, Jeonghwan Song, Jiyong Woo, and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 6(7), pp. 440-442 (201706)

320

HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications / Seungyeol Oh, Taeho Kim, Myunghoon Kwak, Jeonghwan Song, Jiyong Woo, Sanghun Jeon, In Kyeong Yoo and Hyunsang Hwang / IEEE Electron Device Letters 38(6), pp. 732-735 (201706)

319

Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application / Yunmo Koo, Sangmin Lee, Seonggeon Park, Minkyu Yang, and Hyunsang Hwang / IEEE Electron Device Letters 38(5),7883863, pp. 568-571 (201705)

318

Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory / Fekadu Gochole Aga, Jiyong Woo, Jeonghwan Song, Jaehyuk Park, Seokjae Lim, Changhyuck Sung and Hyunsang Hwang / Nanotechnology 28(11), 115707 (201702)  

317

In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface / Kyungjoon Baek, Sangsu Park, Jucheol Park, Young-Min Kim, Hyunsang Hwang, and Sang Ho Oh / Nanoscale 9(2), pp. 582-593 (201701)

316

Neuromorphic computing using non-volatile memory / Geoffrey W. Burr, Robert M. Shelby, Abu Sebastian, Sangbum Kim, Seyoung Kim, Severin Sidler, Kumar Virwani, Masatoshi Ishii, Pritish Narayanan, Alessandro Fumarola, Lucas L. Sanches, Irem Boybat, Manuel Le Gallo, Kibong Moon, Jiyoo Woo, Hyunsang Hwang, Yusuf Leblebici / Advances in Physics: X 2(1), pp. 89–124 (201701)

315

Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems / Jiyong Woo, Kibong Moon, Jeonghwan Song, Myounghoon Kwak, Jaesung Park, and Hyunsang Hwang, / IEEE Transactions on Electron Devices 63(12), pp.5064-5067 (201612) 

314

TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing / Jaesung Park, Myunghoon Kwak, Kibong Moon, Jiyong Woo, Dongwook Lee, and Hyunsang Hwang, / IEEE Electron Device Letters 37 (12), 7725546, pp. 1559-1562 (201612) 

313
Atomic-scale quantification of interdiffusion and dopant localization in GeSbTe-based memory devices / B.-G. Chae, J.-B. Seol, J.-H. Song, W.-Y Jung, H. Hwang, and C.-G. Park, / Applied Physics Letters 109 (11), 112103 (201609) 
312

Analog Synapse Device with 5-bit MLC and Improved Data Retention for Neuromorphic System / Kibong Moon, Euijun Cha, Jaesung Park, Sanggyun Gi, Myonglae Chu, Kyungjoon Baek, Byunggeun Lee, Sang Ho Oh, and Hyunsang Hwang,/ IEEE Electron Device Letters 37 (8), 7497521, pp. 1067-1070 (201608) 

311

Improved Synaptic Behavior under Identical Pulses using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems / Jiyong Woo, Kibong Moon, Jeonghwan Song, Sangheon Lee, Myounghun Kwak, Jaesung Park, and Hyunsang Hwang, / IEEE Electron Device Letters 37 (8), 7496808, pp. 994-997 (201608)

310

Steep Slope Field-Effect Transistors with Ag/TiO2-Based Threshold Switching Device / Jeonghwan Song, Jiyong Woo, Sangheon Lee, Amit Prakash, Jongmyung Yoo, Kibong Moon, and Hyunsang Hwang, / IEEE Electron Device Letters 37 (7), pp. 932-934 (201607) 

309

Communication-hourglass-shaped metal-filament switching device with multi-layer (AlOx/TiO2) oxide electrolytes / Seokjae Lim, Jiyong Woo, Sangheon Lee, Jaesung Park, and Hyunsang Hwang, / ECS Journal of Solid State Science and Technology 5 (9), pp. Q219-Q221 (201607) 

308

Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory / Amit Prakash, Hyunsang Hwang / Physical Sciences Reviews 1(6) (201606) 

307

Scalable Neuron Circuit Using Conductive-Bridge RAM for Pattern Reconstructions / Jun-Woo Jang, Behnoush Attarimashalkoubeh, Amit Prakash, Hyunsang Hwang, and Yoon-Ha Jeong, / IEEE Transactions on Electron Devices 63 (6), 7450157, pp. 2610-2613 (201606) 

306
Organic core-sheath nanowire artificial synapses with femtojoule energy consumption / Wentao Xu, Sung-Yong Min, Hyunsang Hwang, and Tae-Woo Lee, / Science advances 2(6), 150132, pp.1-7 (201606)