Semiconductor Integrated Device & Process Lab.

Journals

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Journals

233

Improvement of endurance and switching speed in Hf1− x Zr x O2 thin films using a nanolaminate structure / H Jang, A Kashir, S Oh, H Hwang / Nanotechnology 33 (39), 395205

232

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device ​/ Hyungwoo Kim, Alireza Kashir, Seungyeol Oh, Hojung Jang, Hyunsang Hwang​ / Nanotechnology 32(31),315712 (202105)​

231

All-Solid-State Oxygen Ion Electrochemical Random-Access Memory for Neuromorphic Computing Revannath Dnyandeo Nikam, Myonghoon Kwak, Hyunsang Hwang / Advanced Electronic Materials 7(5),21000142 (202105)

230

Improved synaptic functionalities of Li-based nano-ionic synaptic transistor with ultralow conductance enabled by Al2O3 barrier layer / Kyumin Lee, Myounghoon Kwak, Wooseok Choi, Chuljun Lee, Jongwon Lee, Sujung Noh, Jisung Lee, Hansaem Lee, Hyunsang Hwang / Nanotechnology​ 32(27),275201 (202104)

229

An Efficient Approach Based on Tuned Nanoionics to Maximize Memory Characteristics in Ag-Based Devices Writam Banerjee, Seong Hun Kim, Seungwoo Lee, Donghwa Lee, Hyunsang Hwang​ / Advanced Electronic Materials ​7(4), 2100022 (202104)

228

Feasibility Study of Mo/SiO​x/Pt Resistive Random Access Memory in Inverter Circuit for FPGA Applications / Sangsu Park, Jungho Shin, Salvatore Cimino, Seungjae Jung, Joonmyoung Lee, Seonghyun Kim, Jubong Park, Wootae Lee, Myungwoo Son, Byunghun Lee, Luigi Pantisano, and Hyunsang Hwang / IEEE Electron Device Letters 32 (12), art. no. 6056548, pp. 1665-1667 (2011.12) 

227

Proton Irradiation Effects on Resistive Random Access Memory With ZrO​x/HfO​x Stacks / Daeseok Lee, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Jubong Park, K. P. Biju, Minhyeok Choe, Takhee Lee, and Hyunsang Hwang / IEEE Transactions on Nuclear Science (TNS) VOL. 58, NO. 6 (2011.12)

226

Diode-less bilayer oxide (WO​x–NbO​x) device for cross-point resistive memory applications / Xinjun Liu, Sharif Md Sadaf, Myungwoo Son, Jungho Shin, Jubong Park, Joonmyoung Lee, Sangsu Park, Hyunsang Hwang / Nanotechnology 22 (47), art. no. 475702 (2011.11.25) 

225

Excellent resistive switching in nitrogen-doped Ge​2Sb​2Te​5 devices for field-programmable gate array configurations / Seonghyun Kim, Jubong Park, Seungjae Jung, Wootae Lee, Jiyong Woo, Chunhum Cho, Manzar Siddik, Jungho Shin, Sangsu Park, Byoung-Hun Lee, Hyunsang Hwang / Applied Physics Letters 99 (19), art. no. 192110 (2011.11.07) 

224

Memristive switching behavior in Pr​0.7Ca​0.3MnO​3 by incorporating oxygen deficient layer / Sangsu Park, Seungjae Jung, Manzar Siddik, Minseok Jo, Joonmyoung Lee, Jubong Park, Wootae Lee, Seonghyun Kim, Sharif Md. Sadaf, Xinjun Liu, Hyunsang Hwang / Rapid Research Letter in physica status solidi (RRL) Volume 5, Issue 10-11, pages 409–411 (2011.11). Cover Picture Article.

223

Excellent Selector Characteristics of Nanoscale VO​2 for High-density Bipolar ReRAM Applications / Myungwoo Son, Joonmyoung Lee, Jubong Park, Jungho Shin, Godeuni Choi, Seungjae Jung, Wootae Lee, Seonghyun Kim, Sangsu Park, and Hyunsang Hwang / IEEE Electron Device Letters VOL. 32, NO. 11,1579-1581 (2011.11) 

222

Effect of Ge​2Sb​2Te​5 Thermal Barrier on Reset Operations in Filament-engine Resistive Memory / Wootae Lee, Manzar Siddik, Seungjae Jung, Jubong Park, Seonghyun Kim, Jungho Shin, Joonmyoung Lee, Sangsu Park, Myungwoo Son, and Hyunsang Hwang / IEEE Electron Device Letters VOL. 32, NO. 11. 1573-1575 (2011.11) 

221

Effect of interfacial oxide layer on the switching uniformity of Ge​2Sb​2Te​5-based resistive change memory devices / Jiyong Woo, Seungjae Jung, Manzar Siddik, Euijun Cha, Sharif Md Sadaf, Hyunsang Hwang / Applied Physics Letters 99, 162109 (2011.10.17) 

220

Flexible resistive random access memory using solution-processed TiO​x with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate / Seungjae Jung, Jaemin Kong, Sunghoon Song, Kwanghee Lee, Takhee Lee, Hyunsang Hwang, and Sanghun Jeon / Applied Physics Letters 99 (14), art. no. 142110 (2011.10.03) 

219

Characterization of Resistive Switching States in W/Pr​0.7Ca​0.3MnO​3 for a Submicron (φ 250 nm) Via-Hole Structure / Manzar Siddik, Kuyyadi P. Biju, Xinjun Liu, Joonmyoung Lee, Insung Kim, Seonghyun Kim, Wootae Lee, Seungjae Jung, Daeseok Lee, Sharif Sadaf, and Hyunsang Hwang / Japanese Journal of Applied Physics 50 (2011) 105802 (4 pages) (2011.10) 

218

Resistive switching characteristics and mechanism of thermally grown WO​x thin films / Kuyyadi P. Biju, Xinjun Liu, Manzar Siddik, Seonghyun Kim, Jungho Shin, Insung Kim, Alex Ignatiev, and Hyunsang Hwang / Journal of Applied Physics 110 (6), art. no. 064505 (2011.09.15) 

217

Parallel memristive filaments model applicable to bipolar and filamentary resistive switching / Xinjun Liu, Kuyyadi P. Biju, Joonmyoung Lee, Jubong Park, Seonghyun Kim, Sangsu Park, Jungho Shin, Sharif Md. Sadaf, Hyunsang Hwang / Applied Physics Letters 99 (11), art. no. 113518 (2011.09.12) 

216

Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC / Hyeon Jun Hwang, Chunhum Cho, Sung Kwan Lim, Seung Yong Lee, Chang Goo Kang, Hyunsang Hwang, and Byoung Hun Lee / Applied Physics Letters 99 (8), art. no. 082111 (2011.08.22) 

215

Thermally Assisted Resistive Switching in Pr​0.7Ca​0.3MnO​3/Ti/Ge​2Sb​2Te​5 Stack for Nonvolatile Memory Applications / Manzar Siddik, Seungjae Jung, Jubong Park, Wootae Lee, Seonghyun Kim, Joonmyoung Lee, Jungho Shin, Sangsu Park, Daeseok Lee, Insung Kim, Hyunsang Hwang / Applied Physics Letters 99, 063501 (2011.08.08) 

214

Forming-free CuC-Buffer Oxide Resistive Switching Behavior with Improved Resistance Ratio / Seonghyun Kim, Minseok Jo, Jubong Park, Joonmyoung Lee, Wootae Lee, Hyunsang Hwang / Electrochemical and Solid-State Letters 14 (8), pp. H322-H325 (2011.08)