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Volatile threshold switching devices for hardware security primitives: Exploiting intrinsic variability as an entropy source / Wooseok Choi, Ohhyuk Kwon, Jangseop Lee, Seungyeol Oh, Seongjae Heo, Sanghyun Ban, Yoori Seo, Dongmin Kim, Hyunsang Hwang / Applied Physics Reviews, 11(2), 021323 (202406) 


Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device / Jangseop Lee, Yoori Seo, Sanghyun Ban, Dong Gwan Kim, Yu Bin Park, Tae Hoon Lee, Hyunsang Hwang / IEEE Transactions on Electron Devices, 71(5), pp. 3351–3357 (202405) 


Enhancement of NbO2-based oscillator neuron device performance via cryogenic operation / Ohhyuk Kwon, Seongjae Heo, Dongmin Kim, Jiho Kim, Hyunsang Hwang / Nanotechnology, 35(10), 105203 (202404) 


3D Stackable Vertical-Sensing Electrochemical Random-Access Memory Using Ion-Permeable WS2 Electrode for High-Density Neuromorphic Systems / Kyumin Lee, Seungkwon Hwang, Dongmin Kim, Jongwon Yoon, Jung-Dae Kwon, Yonghun Kim, Hyunsang Hwang / Advanced Functional Materials, 2313802 (202403) 


Variability and Reliability Study of Nano-Scale Hf0.5Zr0.5O2 Ferroelectric Devices Using O3 Treatment / Hojung Jang, Alireza Kashir, Seungyeol Oh, Kyumin Lee, Laeyong Jung, Mostafa Habibi, Tony Schenk, Hyunsang Hwang / IEEE Electron Device Letters, 45(3), pp. 344–347 (202403) 


Enhanced ON/OFF Ratio (4 × 105) and Robust Endurance (> 1010) in an InGaZnO/HfxZr1-xO2Ferroelectric Diode via Defect Engineering / Laeyong Jung, Seungyeol Oh, Hojung Jang, Kyumin Lee, Wooseok Choi, Hyunsang Hwang / IEEE Transactions on Electron Devices, 71(3), pp. 2238–2242 (202403) 


Bypass Resistive RAM with Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications / Geonhui Han, Kyumin Lee, Dongmin Kim, Yoori Seo , Jinwoo Lee, Jinmyung Choi, Dongho Ahn, Sechung Oh, Hyunsang Hwang / IEEE Electron Device Letters, 45(2), pp. 192–195 (202402) 


High-performance resistive random access memory using two-dimensional electron gas electrode and its switching mechanism analysis / Jiho Kim, Ohhyuk Kwon, Kyumin Lee, Geonhui Han, Hyunsang Hwang / Nanotechnology, 35(2), 025205 (202401)


Accurate Evaluation of High-k HZO/ZrO2Films by Morphotropic Phase Boundary / Seungyeol Oh, Hojung Jang, Hyunsang Hwang / IEEE Electron Device Letters, 45(1), pp. 28–31 (202401) 


Subthreshold Bias-Induced Threshold Voltage Shift of the Ovonic Threshold Switch / Sanghyun Ban, Jangseop Lee, Yoori Seo, Ohhyuk Kwon, Wootae Lee, Taehoon Kim, Hyunsang Hwang / IEEE Electron Device Letters, 45(1), pp. 128–131 (202401) 

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