Semiconductor Integrated Device & Process Lab.

Journals

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Journals

296

Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics / Jongmyung Yoo, Jiyong Woo, Jeonghwan Song, and Hyunsang Hwang, / AIP ADVANCES 5(12), 127221 (201512)

295

A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy / J.H. Lee, E.J. Cha, Y.T. Kim, B.K. Chae, J.J. Kim, S.Y. Lee, H.S. Hwang, C.G. Park∗ / Micron  Volume 79, Pages 101–109 (201512)

294

B12-O-07Self-relaxed conductive filament in ReRAM analyzed by in-situ TEM and Atom Probe Tomography / BG Chae, KJ Baek, JH Song, HS Hwang, SH Oh, JB Seol, CG Park / Microscopy 64(suppl 1), i22-i22 https://doi.org/10.1093/jmicro/dfv094 (2015.11) 

293

Switching mechanism of Al/La1−xSrxMnO3 resistance random access memory. I. Oxygen vacancy formation in perovskites / Nodo Lee,   Yves Lansac,   Hyunsang Hwang and   Yun Hee Jang*  / RSC Advances 2015,5, 102772-102779, Issue 124 (201511)

292

The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory / Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, Kibong Moon, Jeonghwan Song, Hyunsang Hwang / Microelectronic Engineering 147, pp. 321-324 (201511)

291

Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application / Jaehyuk Park, Euijun Cha, Daeseok Lee, Sangheon Lee, Jeonghwan Song, Jaesung Park, Hyunsang Hwang / Microelectronic Engineering 147, pp. 318-320 (201511)

290

Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element  / Geoffrey W. Burr, Robert M. Shelby, Severin Sidler, Carmelo di Nolfo, Junwoo Jang, Irem Boybat, Rohit S. Shenoy, Pritish Narayanan, Kumar Virwani, Emanuele U. Giacometti, Bülent N. Kurdi, and Hyunsang Hwang, /  IEEE Transactions on Electron Devices 62(11), 3498-3507 (201511)

289

Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application / Jeonghwan Song, Amit Prakash, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, and Hyunsang Hwang / Applied Physics Letters 107 (11), 113504 (201509)

288

Threshold Selector with High Selectivity and Steep Slope for Cross-point Memory Array / Jeonghwan Song, Jiyong Woo, Amit Prakash, Daeseok Lee, and Hyunsang Hwang / IEEE Electron Device Letters  36 (7) , 681-683 (201507) 

287

Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application / A. Prakash, D. Deleruyelle, J. Song, M. Bocquet, and H. Hwang / Applied Physics Letters 106(23), 233104 (201506) 

286

Electronic system with memristive synapses for pattern recognition / Sangsu Park, Myonglae Chu, Jongin Kim, Jinwoo Noh, Moongu Jeon, Byoung Hun Lee, Hyunsang Hwang, Boreom Lee, Byung-geun Lee / Scientific Reports 5, 10123 (201505) 

285

Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM / Seokjae Lim, Sangheon Lee, Jiyong Woo, Daeseok Lee, Amit Prakash and Hyunsang Hwang / ECS Solid State Letters 4 (7), pp. Q25-Q28 (201505) 

284

Optimization of Conductance Change in Pr1−xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems / Jun-Woo Jang, Sangsu Park, Geoffrey W. Burr, Hyunsang Hwang, and Yoon-Ha Jeong / IEEE Electron Device Letters 36 (5), 7078840, pp. 457-459 (201505)

283

Neuromorphic Hardware System for Visual Pattern Recognition with Memristor Array and CMOS Neuron / Myonglae Chu, Byoungho Kim, Sangsu Park, Hyunsang Hwang, Moongu Jeon, Byoung Hun Lee, Byung-Geun Lee / IEEE Transactions on Industrial Electronics 62 (4), 6894575, pp. 2410-2419 (201504) 

282

Comprehensive analysis of electro thermally driven nanoscale insulator-metal transition SmNiO3-based selector for cross-point memory array / Saiful Haque Misha, Nusrat Tamanna, Amit Prakash, Jeonghwan Song, Daeseok Lee, Euijun Cha and Hyunsang Hwang / Japanese Journal of Applied Physics 54 (4), 04DD09 (201504) 

281

Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device / Daeseok Lee, Kibong Moon, Jaesung Park, Sangsu Park, and Hyunsang Hwang / Applied Physics Letters 106 (11), 113701 (201503) 

280

Accelerated Retention Test Method by Controlling Ion Migration Barrier of ReRAM / Yunmo Koo, Stefano Ambrogio, Jiyong Woo, Jeonghwan Song, Daniele Ielmini, and Hyunsang Hwang / IEEE Electron Device Letters 36 (3), 7015563, pp. 238-240 (201503) 

279

Effect of AC pulse overshoot on non-linearity and reliability of selector-less resistive random access memory in AC pulse operation / Sangheon Lee, Jeonghwan Song, Daeseok Lee, Jiyong Woo, Euijun Cha, Hyunsang Hwang / Solid-State Electronics 104, 70-4 (201502) 

278

Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications / Saiful Haque Misha, Nusrat Tamanna, Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Seokjae Lim, Jaehyuk Park, and Hyunsang Hwang / ECS Solid State Letters  4(3) P25-P28 (201501) 

277

Structurally Engineered Stackable and Scalable 3D Titanium-oxide Switching devices for High-density Nanoscale Memory / Daeseok Lee, Jaesung Park, Jaehyuk Park, Jiyong Woo, Euijun Cha, Sangheon Lee, Kibong Moon, Jeonghwan Song, Yunmo Koo andHyunsang Hwang / Advanced Materials 27(1), p59-64 (201501)