Semiconductor Integrated Device & Process Lab.


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Volatile threshold switching devices for hardware security primitives: Exploiting intrinsic variability as an entropy source / Wooseok Choi, Ohhyuk Kwon, Jangseop Lee, Seungyeol Oh, Seongjae Heo, Sanghyun Ban, Yoori Seo, Dongmin Kim, Hyunsang Hwang / Applied Physics Reviews, 11(2), 021323 (202406) 


Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device / Jangseop Lee, Yoori Seo, Sanghyun Ban, Dong Gwan Kim, Yu Bin Park, Tae Hoon Lee, Hyunsang Hwang / IEEE Transactions on Electron Devices, 71(5), pp. 3351–3357 (202405) 


Enhancement of NbO2-based oscillator neuron device performance via cryogenic operation / Ohhyuk Kwon, Seongjae Heo, Dongmin Kim, Jiho Kim, Hyunsang Hwang / Nanotechnology, 35(10), 105203 (202404) 


3D Stackable Vertical-Sensing Electrochemical Random-Access Memory Using Ion-Permeable WS2 Electrode for High-Density Neuromorphic Systems / Kyumin Lee, Seungkwon Hwang, Dongmin Kim, Jongwon Yoon, Jung-Dae Kwon, Yonghun Kim, Hyunsang Hwang / Advanced Functional Materials, 2313802 (202403) 


Variability and Reliability Study of Nano-Scale Hf0.5Zr0.5O2 Ferroelectric Devices Using O3 Treatment / Hojung Jang, Alireza Kashir, Seungyeol Oh, Kyumin Lee, Laeyong Jung, Mostafa Habibi, Tony Schenk, Hyunsang Hwang / IEEE Electron Device Letters, 45(3), pp. 344–347 (202403) 


Enhanced ON/OFF Ratio (4 × 105) and Robust Endurance (> 1010) in an InGaZnO/HfxZr1-xO2Ferroelectric Diode via Defect Engineering / Laeyong Jung, Seungyeol Oh, Hojung Jang, Kyumin Lee, Wooseok Choi, Hyunsang Hwang / IEEE Transactions on Electron Devices, 71(3), pp. 2238–2242 (202403) 


Bypass Resistive RAM with Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications / Geonhui Han, Kyumin Lee, Dongmin Kim, Yoori Seo , Jinwoo Lee, Jinmyung Choi, Dongho Ahn, Sechung Oh, Hyunsang Hwang / IEEE Electron Device Letters, 45(2), pp. 192–195 (202402) 


High-performance resistive random access memory using two-dimensional electron gas electrode and its switching mechanism analysis / Jiho Kim, Ohhyuk Kwon, Kyumin Lee, Geonhui Han, Hyunsang Hwang / Nanotechnology, 35(2), 025205 (202401)


Accurate Evaluation of High-k HZO/ZrO2Films by Morphotropic Phase Boundary / Seungyeol Oh, Hojung Jang, Hyunsang Hwang / IEEE Electron Device Letters, 45(1), pp. 28–31 (202401) 


Subthreshold Bias-Induced Threshold Voltage Shift of the Ovonic Threshold Switch / Sanghyun Ban, Jangseop Lee, Yoori Seo, Ohhyuk Kwon, Wootae Lee, Taehoon Kim, Hyunsang Hwang / IEEE Electron Device Letters, 45(1), pp. 128–131 (202401) 


Improving the selector characteristics of ovonic threshold switch via UV treatment process / Yoori Seo, Jangseop Lee, Sanghyun Ban, Dongmin Kim, Geonhui Han, Hyunsang Hwang  / Applied Physics Letters, 123(24), 242103 (202312)


Excellent Reliability Characteristics of Ovonic Threshold Switch Device with Higher-Temperature Forming Technique / Jangseop Lee, Sanghyun Ban, Yoori Seo, Dongmin Kim, Hyunsang Hwang / Physica Status Solidi - Rapid Research Letters, 2023, 2300412 (202311) 


Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures / Ju-Ah Lee; Jongwon Yoon; Seungkwon Hwang; Hyunsang Hwang; Jung-Dae Kwon; Seung-Ki Lee; Yonghun Kim  / Nanomaterials, 13(21), 2870 (202311) 


Improved Switching Uniformity of SCLC-RRAM Using the Vertically Formed Nanoscale 2DEG Electrode and Control of Oxygen Vacancy Distribution / Jiho Kim, Ohhyuk Kwon, Kyumin Lee, Hyunsang Hwang  / ACS Applied Electronic Materials, 5(11), 6178–6188 (202310) 


Exploring the Cutting-Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material-to-Device Engineering / Revannath Dnyandeo Nikam, Jongwon Lee, Kyumin Lee, Hyunsang Hwang  / Small, 19(40), 2302593 (202310) 


Defect Engineering of BTe Ovonic Threshold Switch (OTS) with Nitrogen Doping for Improved Electrical and Reliability Performance / Jangseop Lee; Sanghyun Ban; Tae Hoon Lee; Hyunsang Hwang / IEEE Electron Device Letters, 44(9), pp. 1468–1471 (202309) 


Inherent Stochasticity of Ovonic Threshold Switch for Neuronal Dropout of Edge-AI Hardware / Dongmin Kim, Wooseok Choi, Jangseop Lee, Hyunsang Hwang / IEEE Electron Device Letters, 44(8), pp. 1372–1375 (202308) 


Understanding Controlled Ion Doping Mechanism of Vertical Sensing Electrochemical Random Access Memory Using Ion-Permeable Graphene Electrodes / Jongwon Lee; Revannath Dnyandeo Nikam; Dongmin Kim; Hyunsang Hwang / IEEE Transactions on Electron Devices, 70(7), pp. 3951–3957 (202307)


Improvement of endurance and switching speed in Hf1− x Zr x O2 thin films using a nanolaminate structure / H Jang, A Kashir, S Oh, H Hwang / Nanotechnology 33 (39), 395205


Composition optimization of HfxZr1-xO2thin films to achieve the morphotrophic phase boundary for high- k dielectrics / Seungyeol Oh ; Hojung Jang; Hyunsang Hwang / Journal of Applied Physics, 133(15), 154102 (202304)